Program

Time

September 29, 2025

13:30 – 13:50

Workshop introduction

Growth and structural characterization 1

Chairman : Vincent Consonni (LMGP)

13:50 – 14:15

Andy Séguret

CEA-IRIG-PHELIQS & LMGP

ALD of epitaxial (002) κ-Ga₂O₃ thin films on c-plane sapphire

14:15 – 14:40

Ilyass Jellal

LMGP

κ- and β-phases of Ga₂O₃ thin films grown by atomic layer deposition: a study of their phase transition using thermal annealing

14:40 – 15:05

Alexandre Jaud

LMI

Ga₂O₃ thin films on c-plane Sapphire by Low-Pressure MOCVD. From Epitaxial Growth to Devices

15:05 – 15:30

Marielena Velasco-Enriquez

LMGP & Institut NEEL

Pulsed-Liquid Injection MOCVD of epitaxial Ga₂O₃ thin films

15:30 – 15:55

Julien Bosch

CEA-IRIG-PHELIQS

Plasma-Assisted Molecular Beam Epitaxy of β-Ga₂O₃/NiO Heterojunctions

15:55 – 16:25

Coffee break

Growth and structural characterization 2

Chairwoman : Ekaterine Chikoidze (GEMaC)

16:25 – 16:50

Vincent Consonni

LMGP

Ga₂O₃ Nanomaterials & Thin Films by Chemical Bath Deposition

16:50 – 17:15

Eva Monroy

CEA-IRIG-PHELIQS

Molecular Beam Epitaxy of Al-Polar Wurtzite AlN(0001) on β-Ga₂O₃(-201)

17:15 – 17:40

Enora Vuillemet

AMPERE

Raman and photoluminescence characterization of β-Ga₂O₃ for power electronic application

17:40 – 18:05

Marcin Konczykowski

LSI

Thermal Stability and Doping Effect of Electron Irradiation Induced Defects in β-Ga₂O₃ and GaN Crystals

Heterostructures

Chairwoman : Eirini Sarigiannidou (LMGP)

18:05 – 18:30

Adrien Roth

CEA-LETI & Institut NEEL

Investigating the blistering mechanisms of β-Ga₂O₃ under light ion implantation

18:30 – 18:55

Emilien Lefebvre

LMGP & Institut NEEL

Core Shell ZnO-Ga₂O₃ Nanowire Heterostructures for Piezoelectric Devices

18:55 – 21:00

Diner

Time

September 30, 2025

Electrical characterization

Chairman : Philippe Ferrandis (Institut Néel)

08:30 – 08:55

Ekaterina Chikoidze

GEMaC

The Beauty of Ga₂O₃ and ZnGa₂O₄ Electronic Properties

08:55 – 09:20

Akash Patnaik

GEMaC

Thin Film Deposition and Simulation of β-Ga₂O₃ Power Devices for High Voltage Applications

9:20 – 09:45

Ouissal Heribi

INL

A New Route to Efficient β-Ga₂O₃ p–n Junctions: Electrical and Defect Characterization of Phosphorus Ion Implantation

09:45 – 10:15

Coffee break

Technological steps and devices

Chairman : Jean-François Michaud (GREMAN)

10:15 – 10:40

Changzi Lu

AMPERE

Technology Optimization for a Ga₂O₃ power Schottky diode fabrication

10:40 – 11:05

Juan-Carlos Trujillo-Yague

Institut NEEL & LMGP

Optimization of Ti/Au Ohmic Contacts on β-Ga₂O₃

11:05 – 11:30

Philippe Ferrandis

Institut NEEL

Study of the Schottky barrier height distribution in β-Ga₂O₃ diodes

11:30 – 11:55

Tom Micottis

IEMN

Emerging Vertical Ga₂O₃ PiN Diodes for High-Power Conversion and Protection

11:55 – 12:20

Patrick PITTET

INL

New perspectives for the development of Ga₂O₃-based detectors for dosimetry in FLASH radiotherapy

12:20 – 13:50

Lunch

Short presentations

Chairman : Taoufik Slimani Tlemcani (GREMAN)

13:50 – 13:55

David Muñoz-Rojas

LMGP

New processes for the Spatial Atomic Layer Deposition (SALD) of functional materials: Ga₂O₃ from DMP-based non-pyrophoric precursors

13:55 – 14:00

Marty Volant

LMGP & CEA-IRIG-MEM

Advanced Transmission Electron Microscopy for optimization of gallium oxide thin films

14:00 – 14:05

Catarina Matos

LMGP & NOVA Lisboa

Heterostructures Made of Ga₂O₃ for self-powered UV photodetection and power electronics

14:05 – 14:10

Thomas Ribault

GEMaC/INSP

Ni₁₋ₓO/Ga₂O₃ Heterostructures for Next-Generation Power Electronics

14:10 – 14:15

Dimitri Bebien

GREMAN

Conception, realization and comparison of gallium nitride and gallium oxide based vertical power diodes

14:15 – 14:20

Vijay Thakur

LGP

Optimized Packaging of 10 kV Ga₂O₃ Power Module

14:20 – 15:00

Workshop conclusion